Dr Asim Mumtaz, University of York

Industrial Fellowships 2021

The net zero carbon emission targets create a significant need for high efficiency power electronics for electric vehicles and renewable energy applications. Wide band gap semiconductor materials such as gallium nitride (GaN) and silicon carbide (SiC) have tremendous material properties which are attractive for power semiconductor devices in these applications.

Semefab is a strong UK foundry which has worked in the silicon domain for over 35 years and is currently developing a GaN and SiC device processing capability. Professor Mumtaz’s Industrial Fellowship will be focused on assisting Semefab in this transition towards GaN and SiC device development. They will develop designs, fabrication processes, and evaluate the necessary equipment requirements to develop power devices. They will also investigate other high value device applications that can benefit from these remarkable wide band gap materials.

https://www.york.ac.uk/physics-engineering-technology/people/asim-mumtaz/#tab-1